IRF Transistor Datasheet, IRF Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF from INFINEON >> Specification: MOSFET Transistor, P Channel, 11 A, V, ohm, V, -4 V. Technical Datasheet: IRF Datasheet. IRF Infineon / IR MOSFET datasheet, inventory, & pricing.
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-100V Single P-Channel Hi-Rel MOSFET In A TO-204AA Package
Hero Banned Mar 4, Thanks for your explanation. Initially, i do not really understand. When you say “source flowing at about 5 to 10V”. Did i understand correctly.? If that is the case then the power loss would dataseet too much Irg9130, the current would flow in reverse from source to drain rite.? The V[gs th ] needed is -5V.
ird9130 How do I generate a negative voltage.? How do I interpret these data.? Does it means that my gate voltage cannot exceed -5V.? How about the VGSS.? MrNobody New Member Mar 4, Yes, you need to pull the source 10 or so V below the drain before it will switch fully on.
Vds at that point is then governed by Ohm’s law MrNobody New Member Mar 5, At the same time, I D will increase sharply until 3. The resistance R DS at that time would be somewhere near mOhm 0. Lets say V D at that time is 30V. Is that what you have been trying to say Hero? The higher V D is the flatter I D becomes until datashert point where it stop increasing. Is that what you mean hjames.? When that happen, V S will continue to decrease because V D is the same.
IRF/ datasheet & applicatoin notes – Datasheet Archive
In order to do this, I need alot of gate voltage. It is more suitable on the low-side of the bridge because the V S is always 0V. Am I on the right track now.? Imagine the mosfet as a non-linear voltage controlled resistor. The resistance is some function of the gate-source – for a given Vgs, the mosfet will act like a very small value resistor, up to some current limit when it enters saturationand starts acting like a current source and dissipating a lot of power.
For a higher Vgs, the resistance is smaller lower switching lossesand the point where it enters saturation is higher you can driver bigger loads. Correct – In order to use a n-mosfets on the high side, you need to supply a gate voltage that is greater than the supply voltage that it is switching – since you want Vs of the mosfet to be very close to the supply voltage.
There are lots of “flying capacitor boost” type circuits that do this google it. N-mosfets are inherently cheaper and better, hence most high power drivers end up using all N-mosfets.
If you can get P-mosfets in the ratings you need, then just use them. Hero Banned Mar 5, datasgeet Lets say, the Drain is connected to the supply of 60V. This happen when V GS is greater that 8V.?
IRF 데이터시트(PDF) – International Rectifier
How would I make the Source voltage become 20V.? Thanks for all the time spent. I understand it finally. I think I am getting there. Hero Banned Mar 8, Generalx5 New Member Mar 9, Yes, it would blow up if there is no resistance at the Gate So if you had an incomming signal that was either 1 or a 0, High or Low, only 1 N and 1 P type mosfet will turn on, thus if you refer to the diagram, the MOSFETS that turn on will be diagonal from each other.
This is also very efficient because it also has no chance of shooting thru. Due to the lag in the Logic Gates. I would also stay away from PWM signaling. Instead I would use a linear Voltage regulator.
Also for better reliability. This way, when power is off, any noise or watever will not damage your motor, Or if the signal is somehow borken or not getting thru, the H-Bridge simply wont turn on. Hero Banned Mar 10, Yes, it would blow up if there is no resistance at the Gate. This is the one I use because it has a fast Switching time, and low Gate Resistance. Should you have any questions Please don’t hesitate to contact me Via Email.
MrNobody New Member Mar 13, Here is a simulation of the H-Bridge circuit. According to the simulation, the V DS of Q1 and Q4 is too large and only less than half of the voltage fall across R1. Too much datasheet loss and too little power reach the motor. I did not capture the voltage of Datasbeet GS but it is already close to V and that is the max it can go. Any idea why it won’t fully turn on.? And how can i make the power loss less.?
Hero Banned Mar 15, What’s the value of R1? The 2N transistors don’t have base resistors so the one with 12V between its base and irf913 emitter is destroyed. I knew there was something I had missed. Fatasheet not too sure about those 1k resistors either, they’re fine if you want just forward and reverse but you might have a prolem with PWM as they will slow down the switching speed of the MOSFETs.
Roff Well-Known Dagasheet Mar 15, Did anyone else look at the specs on those parts? I could be wrong – I was once before. MrNobody New Member Mar 16, Hero Banned Mar 16, Couldn’t find the model that I am using in there. Anyway, I tried with smaller voltage and datashret functions well using 2N in Multisim. I tried it with 12V supply and it works well.