Symbol. Parameter. Value. Unit. IRF IRFFP. VDS. Drain-source Voltage ( VGS = 0). V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). V. VGS. IRF/IRFS are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage. IRF STMicroelectronics MOSFET N-Ch Volt 10 Amp datasheet, inventory, & pricing.

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Repetitive rating; pulse width limited by maximum junction temperature see fig. Zero Gate Voltage Drain Current.

PDF IRF630 Datasheet ( Hoja de datos )

Vishay Intertechnology Electronic Components Datasheet. Unclamped inductive waveform Figure IRF datasheet and specification datasheet Download datasheet. Copy your embed code and put on your site: Operating Junction and Storage Temperature Range. Safe operating area for TO Figure 3. Pulse width limited by safe operating area 2. Thermal impedance for TO Figure 4. View PDF for Mobile. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8.


Single Pulse Avalanche Energy b. IRF datasheet and specification datasheet.

IRF Datasheet, PDF – Alldatasheet

The maximum ratings related to soldering conditions are also marked on the inner box label. V DS Temperature Coefficient. Gate charge test circuit Figure Static drain-source on resistance Figure These packages have a Lead-free second level interconnect.

Pulsed Diode Forward Current a.

All other trademarks are the property of their respective owners. The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Unclamped Inductive load test circuit Figure Repetitive Avalanche Current a.

Pulsed Drain Current a. Prev Next General features. Repetitive Avalanche Energy a. Contents Contents 1 Electrical ratings.

Capacitance variations Figure Test circuit for inductive load switching and diode recovery times Figure Download datasheet Kb Share this page. L S die contact. Case-to-Sink, Flat, Greased Surface. The low thermal resistance. Body Diode Reverse Recovery Time.

Gate charge vs gate-source voltage Figure Elcodis is a trademark of Elcodis Company Ltd. I SM p – n junction diode. Drain-Source Body Diode Characteristics.


Popular transistors.

Continuous Source-Drain Diode Current. The TOAB package is universally preferred for all. N-channel V – 0.

Body Diode Reverse Recovery Charge.

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