28C datasheet, 28C pdf, 28C data sheet, datasheet, data sheet, pdf, Atmel, K 32K x 8 Paged CMOS E2PROM. 28C Microchip. K (32K x 8) CMOS Electrically Erasable PROM. PIN CONFIGURATION. Top View. A 1 A7. A A *NC. Vcc. WE. . A2. 5 WE. A dimensions section on page 14 of this data sheet. ORDERING INFORMATION. PLCC−32 . 28C− 28C− Units. Min. Max. Min. Max. tRC.
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Please see Soft- ware Chip Erase application note for details. The page write operation of the AT28C allows 1 to bytes of data to be written into the device during a single internal programming period.
PROM for device identification or tracking. Once a programming operation has been initiated and for the duration of t. A software controlled data protection feature has been implemented on the AT28C Refer to AC Programming Waveforms. If precautions are not taken, inad- vertent writes may occur during transitions of the host sys- tem power supply.
Once a byte write has been started it will automatically time itself to completion. The address is latched on the falling edge of CE or WE, whichever occurs last. OE to Output Delay. Once the end of a write cycle has been detected a new access for a read or write can begin. By raising A9 to 12V.
SDP is enabled by the host system issuing a series of three write commands; three specific bytes of data are written to three specific addresses refer to Dwtasheet Data Protection Algorithm. Hardware features datasyeet against inadvertent writes to the AT28C in the follow- ing ways: The A0 to A5 inputs are used to specify which bytes within the page are to be written.
28C 데이터시트(PDF) – ATMEL Corporation
Reading the toggle bit may begin at any time during the write cycle. Search field Part name Part description. The device utilizes internal error correction for extended endurance and improved data retention characteristics. Atmel’s 28C has additional features to ensure high quality and manufacturability. Its K of memory is organized as 32, words by datashedt bits.
28C256 – 28C256 256K 250ns Parallel EEPROM Datasheet
All bytes dur- ing a page write operation must reside on the same page as defined by the state of the A6 – A14 inputs. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indi- cated in the operational sections of this specification is not implied.
Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. It should be noted, that once protected the host may still perform a byte or page write to the AT28C This dual- line control gives designers flexibility in preventing bus contention in their system.
The device also includes an extra bytes of E.
Stresses beyond those listed under “Absolute Maxi. All Output Voltages with Respect to Ground Each successive byte must be written within For each WE high to low transition during the page write operation, A6 – A14 must be the same.
28C Datasheet pdf – K 32K x 8 Paged CMOS E2PROM – Atmel
During a write cycle, the datashert and 1 to bytes of data are internally latched, freeing the address and data bus for other opera- tions. After setting SDP, any attempt to write to the device with- out the 3-byte command sequence will start the internal write timers. The data is latched by the first rising edge of CE or WE. Dattasheet is done by pre- ceding the data to be written by the same 3-byte command sequence used to enable SDP.
The outputs are put in the high impedance state when either CE or OE is high. Once set, Datashete will remain active unless the disable com- mand sequence is issued. The entire device can be erased using a 6-byte software code. Manufac- tured with Atmel’s advanced nonvolatile CMOS technology, the device dahasheet access times to ns with power dissipation of just mW. An optional software data protection mechanism is available to guard against inad- vertent writes.
Only bytes which are specified for writing will be written; unnecessary cycling of other bytes within the page does not occur. The data in the enable and disable command se- quences is not written to the device and the memory ad- dresses used in the sequence may be written with data in either a byte or page write operation.
Automatic 28f256 Write Operation. A page write operation is initiated in the same manner as a byte write; the first byte written can then be followed by 1 to 63 addi- tional bytes.